Search results for "Positron annihilation spectroscopy"

showing 10 items of 12 documents

Determination of defect content and defect profile in semiconductor heterostructures

2011

In this article we present an overview of the technique to obtain the defects depth profile and width of a deposited layer and multilayer based on positron annihilation spectroscopy. In particular we apply the method to ZnO and ZnO/ZnCdO layers deposited on sapphire substrates. After introducing some terminology we first calculate the trend that the W/S parameters of the Doppler broadening measurements must follow, both in a qualitative and quantitative way. From this point we extend the results to calculate the width and defect profiles in deposited layer samples.

HistoryMaterials sciencebusiness.industryAnalytical chemistryComputer Science ApplicationsEducationPositron annihilation spectroscopyCondensed Matter::Materials ScienceContent (measure theory)SapphireOptoelectronicsPoint (geometry)businessLayer (electronics)Doppler broadeningSemiconductor heterostructuresJournal of Physics: Conference Series
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Positronics of radiation-induced effects in chalcogenide glassy semiconductors

2015

Using As2S3 and AsS2 glasses as an example, the principal possibility of using positron annihilation spectroscopy methods for studying the evolution of the free volume of hollow nanoobjects in chalcogenide glassy semiconductors exposed to radiation is shown. The results obtained by measurements of the positron annihilation lifetime and Doppler broadening of the annihilation line in reverse chronological order are in full agreement with the optical spectroscopy data in the region of the fundamental absorption edge, being adequately described within coordination defect-formation and physical-aging models.

Materials scienceAbsorption spectroscopyChalcogenidePositron Lifetime SpectroscopyAnalytical chemistryCondensed Matter PhysicsMolecular physicsAtomic and Molecular Physics and OpticsElectronic Optical and Magnetic MaterialsPositron annihilation spectroscopychemistry.chemical_compoundPositronполупроводникиAbsorption edgechemistryпозитронная аннигиляционная спектроскопияSpectroscopyDoppler broadeningSemiconductors+
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Positron annihilation probing of crystallization effects in TAS-235 glass affected by Ga additions

2014

Abstract Crystallization effects in Te20As30Se50 glass known also as TAS-235 affected by Ga additions to Ga2Te20As28Se50 and Ga5Te20As25Se50 compositions are probed with positron annihilation spectroscopy in the measuring modes exploring positron lifetimes and Doppler broadening of annihilation line. Occurring of cubic-phase Ga2Se3 droplets with character nanoscale sizes in partially-crystallized Ga2Te20As28Se50 alloy is shown to be associated with agglomeration of intrinsic free-volume voids, this process being enhanced over microcrystalline scale in Ga5Te20As25Se50 alloy. Crystallization changes in the void structure of TAS-235 glass are considered in terms of free-volume evolution under …

Materials scienceAlloy02 engineering and technologyengineering.material01 natural scienceslaw.inventionPositron annihilation spectroscopyPositronlaw0103 physical sciences[CHIM]Chemical SciencesGeneral Materials ScienceCrystallizationComputingMilieux_MISCELLANEOUS010302 applied physicsAnnihilationGeneral Chemistry021001 nanoscience & nanotechnologyCondensed Matter PhysicsAmorphous solidCrystallographyMicrocrystallineChemical physicsengineering0210 nano-technologyDoppler broadeningJournal of Physics and Chemistry of Solids
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Defects in Martensitic Stainless Steel 1.4031 (EN) Exposed to Friction as Seen by Positron Annihilation

2010

We present experimental results of measurements of the Doppler broadening of annihilation line and positron annihilation lifetimes in martensitic stainless steel 1.4031 (EN) samples exposed to the dry sliding under different loads. In particular, we tested the subsurface zone under the worn surfaces. As a main result, we obtained information about the defect profiles in this zone and the total extent of the damage region induced by the dry sliding.

Materials scienceAnnihilationMechanical EngineeringMetallurgyMartensitic stainless steelengineering.materialCondensed Matter PhysicsPositron annihilation spectroscopyMechanics of MaterialsengineeringGeneral Materials ScienceSurface layerDoppler broadeningPositron annihilationLine (formation)Materials Science Forum
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Positron Annihilation Study of Defects Induced by Various Cutting Methods in Stainless Steel Grade 304

2011

We report in this article the comparison of the subsurface zones (SZs) in austenitic stainless steel 304 samples created by three cutting techniques, i.e., the laser cutting (LC), abrasive water jet (AWJ), and traditional milling cutting (MC). The crystal lattice defects distribution in this zone were investigated using the positron annihilation method. It was shown that the MC creates the great number mainly edge dislocations decorated by vacancies. Their concentration decreases with the increase of the depth from the cut surface. The total depth of the SZ is extended up to 150 μm from the cut surface. Similar dependency was observed for the AWJ machining but the total depth is much lower,…

Materials scienceLaser cuttingMechanical EngineeringMetallurgySurfaces and InterfacesEdge (geometry)engineering.materialLaserSurfaces Coatings and FilmsPositron annihilation spectroscopylaw.inventionMachiningMechanics of MaterialslawengineeringSurface roughnessSurface layerAustenitic stainless steelTribology Letters
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Application of Positron Annihilation Spectroscopy to Studies of Subsurface Zones Induced by Wear in Magnesium and Its Alloy AZ31

2011

Interaction of sliding bodies is an important aspect of numerous applications and subject of many studies (Solecki, 1989). Generally, when two surfaces are loaded together the true contact area is much smaller than the apparent one. The true contact is only at high points or asperities of the surfaces where the interactions in the atomic scale take place. Relative movement between the surfaces leads to friction and wear processes. The rate of wear is controlled by the load, the relative velocity and the behaviour of the material near asperities. The region of asperities can be plastically deformed and the stress is transported to the deeper laying region that becomes elastically deformed (F…

Materials scienceMagnesiumAlloyMetallurgyRelative velocitychemistry.chemical_elementengineering.materialAtomic unitsPositron annihilation spectroscopyStress (mechanics)chemistryengineeringComposite materialContact area
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'Cold' crystallization in nanostructurized 80GeSe2-20Ga2Se3 glass

2015

International audience; 'Cold' crystallization in 80GeSe 2-20Ga 2 Se 3 chalcogenide glass nanostructurized due to thermal annealing at 380°C for 10, 25, 50, 80, and 100 h are probed with X-ray diffraction, atomic force, and scanning electron microscopy, as well as positron annihilation spectroscopy performed in positron annihilation lifetime and Doppler broadening of annihilation line modes. It is shown that changes in defect-related component in the fit of experimental positron lifetime spectra for nanocrystallized glasses testify in favor of structural fragmentation of larger free-volume entities into smaller ones. Nanocrystallites of Ga 2 Se 3 and/or GeGa 4 Se 8 phases and prevalent GeSe…

Materials scienceNano ExpressAnnealing (metallurgy)Scanning electron microscopePositron annihilationNucleationChalcogenide glass[CHIM.MATE]Chemical Sciences/Material chemistryCondensed Matter PhysicsMolecular physicslaw.inventionPositron annihilation spectroscopyAnnealingChalcogenide glass Crystallization Annealing Positron annihilation TrappingCrystallographyPositronMaterials Science(all)lawChalcogenide glassTrappingGeneral Materials ScienceCrystallizationCrystallizationDoppler broadeningNanoscale Research Letters
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The slowing down times of positrons emitted from selected β+ isotopes into metals

2012

Abstract We report the GEANT4 Monte Carlo simulations and the approximated calculations of the slowing down time (SDT) for positrons emitted from three β+ isotopes, i.e., 22Na, 68Ge/68Ga and 48V. The first two isotopes are commonly used in the positron annihilation spectroscopy. The results revealed that the SDT exhibits the nonsymmetrical distribution and its average value depends on the end point energy of the isotope, the density and atomic number of the implanted material. For metals the average SDT varies from 0.4 ps to a few ps. We argue that this can affect the analysis of the measured positron lifetime and should be considered in theoretical calculations. The SDT in selected gases w…

Nuclear and High Energy PhysicsEnd pointPositronIsotopeChemistryMonte Carlo methodAtomic numberAtomic physicsInstrumentationPositron annihilation spectroscopyNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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Investigation of corrosion defects in titanium by positron annihilation

2015

Abstract The positron annihilation method was used to study the formation of defects in titanium samples during their corrosion in the vapor of a 3% HCl solution. In particular, the distribution of defects depending on the distance from the corroding surface and the impact of an external magnetic field on the concentration of vacancies forming during the corrosion of titanium layers close to the surface were determined.

Nuclear and High Energy PhysicsMaterials scienceMetallurgychemistry.chemical_elementpositron annihilation spectroscopyCondensed Matter Physicscorrosion defectsCorrosionPositron annihilation spectroscopyCondensed Matter::Materials ScienceNuclear Energy and EngineeringchemistryPhysics::Atomic and Molecular Clusterslcsh:QPhysics::Chemical PhysicsSafety Risk Reliability and Qualitylcsh:ScienceWaste Management and DisposalInstrumentationTitaniumPositron annihilationNukleonika
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Correlation between Zn vacancies and photoluminescence emission in ZnO films.

2006

Photoluminescence and positron annihilation spectroscopy have been used to characterize and identify vacancy-type defects produced in ZnO films grown on sapphire by metal-organic chemical-vapor deposition. The photoluminescence of the samples in the near band edge region has been studied, paying particular attention to the emission at 370.5 nm (3.346 eV). This emission has been correlated to the concentration of Zn vacancies in the films, which has been determined by positron annihilation spectroscopy. Jesus.Zuniga@uv.es Vicente.Munoz@uv.es

PhotoluminescenceMaterials scienceAstrophysics::High Energy Astrophysical PhenomenaEdge regionAnalytical chemistrySemiconductor thin filmsGeneral Physics and AstronomyPositron annihilation spectroscopyCondensed Matter::Materials Science:FÍSICA [UNESCO]Zinc compoundsMetalorganic vapour phase epitaxyDeposition (law)Positron annihilationCondensed matter physicsCondensed Matter::OtherPhysicsWide-bandgap semiconductorpositron annihilationUNESCO::FÍSICACacancies (crystal)II-VI semiconductorsWide band gap semiconductorsZn vacanciesMOCVDSapphireZnOphotoluminescenceZinc compounds ; II-VI semiconductors ; Wide band gap semiconductors ; Semiconductor thin films ; Positron annihilation ; Cacancies (crystal) ; MOCVD
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